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參數(shù)資料
| 型號： | 2SJ542 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2SJ542 |
2SJ542
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–18
A
Drain peak current
I
D(pulse)
Note1
–72
A
Body-drain diode reverse drain current
I
DR
–18
A
Avalanche current
I
AP
Note3
–18
A
Avalanche energy
E
AR
Note3
27
mJ
Channel dissipation
Pch
Note2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ543 | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ543 | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ542-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ543 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ543(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ543-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ544 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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