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參數(shù)資料
| 型號(hào)： | 2SJ535-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SJ535-E |
2SJ535
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–30
A
Drain peak current
ID (pulse)
Note 1
–120
A
Body to drain diode reverse drain current
IDR
–30
A
Avalanche current
IAP
Note 3
–30
A
Avalanche energy
EAR
Note 3
77
mJ
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.028
0.037
ID = –15 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
0.038
0.055
ID = –15 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
15
25
—
S
ID = –15 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
2500
—
pF
Output capacitance
Coss
—
1300
—
pF
Reverse transfer capacitance
Crss
—
300
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
25
—
ns
Rise time
tr
—
150
—
ns
Turn-off delay time
td (off)
—
350
—
ns
Fall time
tf
—
220
—
ns
VGS = –10 V
ID = –15 A
RL = 2
Body to drain diode forward voltage
VDF
—
–0.95
—
V
IF = –30 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
100
—
ns
IF = –30 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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