參數(shù)資料
型號(hào)： 2SJ532
廠商： Hitachi,Ltd.
英文描述： Silicon P Channel MOS FET(P溝道MOSFET)
中文描述： 硅P通道MOS FET的性（P溝道MOSFET的）
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 68K
代理商： 2SJ532
2SJ532
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
Note4
I
D
= –10A, V
GS
= –4V
Note4
I
D
= –10A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.042
0.055
resistance
—
0.065
0.095
Forward transfer admittance
10
16
—
S
Input capacitance
—
1750
—
pF
Output capacitance
Coss
—
800
—
pF
Reverse transfer capacitance
Crss
—
180
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
16
—
ns
V
GS
= –10V, I
D
= –10A
R
L
= 3
Rise time
—
100
—
ns
Turn-off delay time
—
230
—
ns
Fall time
—
140
—
ns
Body–drain diode forward voltage
—
–1.0
—
V
I
F
= –20A, V
GS
= 0
I
= –20A, V
GS
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
100
—
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ532-E 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine
2SJ533 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ533-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ534 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ534-E 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) TO-220FM Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,18A,50m ohm,TO-220FM
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