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參數(shù)資料
| 型號： | 2SJ531 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 67K |
| 代理商： | 2SJ531 |
2SJ531
4
Main Characteristics
0.1
0.3
1
3
10
30
100
–20
–16
–12
–8
–4
0
–10 V
–2
–4
–6
–8
–10
–6 V
–20
–16
–12
–8
–4
0
Tc = 75°C
25°C
–25°C
–1
–2
–3
–4
–5
40
30
20
10
0
50
100
150
200
1000
300
100
30
10
3
1
0.3
0.1
Ta = 25 °C
10 s
–3.5 V
–4 V
–3 V
100
s
1 ms
DC
Operation
(Tc
=
25°C)
V
= –2 V
GS
–2.5 V
DS
V
= –10 V
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
PW
=
10
ms
(1shot)
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ532 | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ533-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ534 | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ539-E | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ531-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine |
| 2SJ533 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ533-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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