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參數(shù)資料
| 型號(hào)： | 2SJ530S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 57K |
| 代理商： | 2SJ530S |
2SJ530(L),2SJ530(S)
5
500
200
100
20
50
10
5
–0.1
–0.3
–3
0
–10
–20
–30
–40
–50
5000
1000
300
100
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
40
–100
8
16
24
32
1000
100
300
30
3
10
1
–0.1
–0.3
–1
–3
–10 –20
–1
–10
30
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
DS
V
GS
V
I = –15 A
V = –10 V
–25 V
–50 V
V = –50 V
–25 V
–10 V
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
Pw = 5 μs, duty < 1 %
di / dt = 50 A / μs
V = 0, Ta = 25 °C
–20
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
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PDF描述 |
|---|---|
| 2SJ531 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ533 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ550 | BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),M:ML029MW029 |
| 2SJ550L | BRIDGE RECTIFIER,1-PHASE FULL-WAVE,600V V(RRM),M:ML029MW029 |
| 2SJ550S | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ530S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ530STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SJ531 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ531-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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