參數(shù)資料
型號(hào): 2SJ528L-E
元件分類: JFETs
英文描述: 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 94K
代理商: 2SJ528L-E
2SJ528(L), 2SJ528(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–6 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–3
–10
–0.03
–1
–0.3
–0.1
–0.01
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
相關(guān)PDF資料
PDF描述
2SJ528STL-E 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
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