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參數(shù)資料
| 型號(hào)： | 2SJ527STL-E |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SJ527STL-E |
2SK2553(L), 2SK2553(S)
Rev.10.00 Sep 07, 2005 page 5 of 8
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
VSD (V)
Pulse Test
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
VGS = 0, –5 V
10 V
5 V
200
160
120
80
40
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
IAP = 45 A
VDD = 25 V
duty < 0.1 %
Rg > 50
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
PDM
PW
T
D =
PW
T
θch – c(t) = γs (t) θch – c
θch – c = 1.67°C/W, Tc = 25°C
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pul
se
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
L
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
L IAP2
2
1
VDSS
VDSS – VDD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ527STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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