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參數(shù)資料
| 型號(hào)： | 2SJ517 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ517 |
2SJ517
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
–20
V
Gate to source voltage
±
10
V
Drain current
–2
A
Drain peak current
Note1
–4
A
Body-drain diode reverse drain current
–2
A
Channel dissipation
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
100
μ
s, duty cycle
≤
10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–20
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
GS
=
±
8V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –1A, V
GS
= –4V
Note3
±
10
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
0.18
0.24
Static drain to source on state
resistance
R
DS(on)
—
0.27
0.43
I
D
= –1A, V
GS
= –2.5V
Note3
Forward transfer admittance
|y
fs
|
Ciss
1.8
3.0
—
S
I
D
= –1A, V
DS
= –10V
Note3
V
DS
= –10V
V
GS
= 0
f = 1MHz
Input capacitance
—
320
—
pF
Output capacitance
Coss
—
190
—
pF
Reverse transfer capacitance
Crss
—
90
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
14
—
ns
I
D
= –1A, R
L
= 10
V
GS
= –4V
Rise time
—
75
—
ns
Turn-off delay time
—
90
—
ns
Fall time
—
90
—
ns
Body–drain diode forward voltage
—
–0.95
—
V
I
F
= –2A, V
GS
= 0
I
= –2A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
4. Marking is “YY”.
—
70
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ517YYTL | 制造商:Hitachi 功能描述: |
| 2SJ517YYTL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,2A,0.18ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R |
| 2SJ517YYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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