參數(shù)資料
型號: 2SJ511
元件分類: 小信號晶體管
英文描述: 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 2-5K1B, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 412K
代理商: 2SJ511
2SJ511
2009-09-29
2
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 1 A
0.55
0.76
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
0.32
0.45
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
0.7
1.4
S
Input capacitance
Ciss
160
Reverse transfer capacitance
Crss
30
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
85
pF
Rise time
tr
30
Turnon time
ton
45
Fall time
tf
30
Switching time
Turnoff time
toff
120
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
5.5
Gatesource charge
Qgs
4.3
Gatedrain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 2 A
1.2
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR (Note 1)
2
A
Pulse drain reverse current
(Note 1)
IDRP (Note 1)
6
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
40
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / μs
18
nC
Note 5: A line to the right of a Lot No. identifies the indication of
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z
F
Part No.
(or abbreviation code)
Lot No.
Note 5
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