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參數(shù)資料
| 型號(hào)： | 2SJ504 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SJ504 |
2SJ504
6
0
–10
–20
–30
–40
–50
10000
3000
1000
300
100
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
80
–100
16
Gate Charge Qg (nc)
32
48
64
1000
200
500
100
20
50
10
–0.1
–0.3
–1
–10
–30
–100
30
10
DS
V
GS
V
V = –10 V
–25 V
–50 V
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = –10 V
–25 V
–50 V
–0.1
–0.3
Reverse Drain Current I (A)
–1
–3
–10
–30
–100
1000
500
200
100
50
20
10
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
I = –20 A
–3
td(on)
td(off)
tr
tf
V = –10 V, V = –30 V
PW = 10
μ
s, duty < 1 %
Pulse Test
Body to Drain Diode Reverse
Recovery Time
Dynamic Input Characteristics
S
Switching Characteristics
R
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Drain Current I (A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ505 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ505L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ505S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ504-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ505 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ505L | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ505-L(E) | 制造商:Renesas Electronics 功能描述:60V 50A 0.022@10V Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 50A 3-Pin(3+Tab) LDPAK(L) Box |
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