參數(shù)資料
型號(hào): 2SJ496
元件分類: 小信號(hào)晶體管
英文描述: 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-92MOD, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 65K
代理商: 2SJ496
2SJ496
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
resistance
R
DS(on)
0.12
0.16
I
D = –2.5A
V
GS = –10V*
1
R
DS(on)
0.17
0.24
I
D = –2.5A
V
GS = –4V*
1
Forward transfer admittance
|y
fs|3
5
S
I
D = 2.5A, VDS = 10V*
1
Input capacitance
Ciss
600
pF
V
DS = –10V
Output capacitance
Coss
290
pF
V
GS = 0
Reverse transfer capacitance Crss
80
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = –10V, ID = –2.5A
Rise time
t
r
25
ns
R
L = 12
Turn-off delay time
t
d(off)
—95—
ns
Fall time
t
f
—55—
ns
Body to drain diode forward
voltage
V
DF
–1.0
V
I
F = –5A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
65
ns
I
F = –5A, VGS = 0
diF/ dt = 50A/
s
Note:
1. Pulse test
相關(guān)PDF資料
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2SJ496 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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