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參數(shù)資料
| 型號： | 2SJ495 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SJ495 |
2SJ495
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On–state Resistance
R
DS(on)1
V
GS
= –10 V, I
D
= –15 A
24
30
m
R
DS(on)2
V
GS
= –4 V, I
D
= –15 A
38
56
m
Gate to Source Cutoff Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10 V, I
D
= –15 A
12
24
S
Drain Leakage Current
I
DSS
V
DS
= –60 V, V
GS
= 0
–10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0
m
10
μ
A
Input Capacitance
C
iss
V
DS
= –10 V
4120
pF
Output Capacitance
C
OSS
V
GS
= 0
1750
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
580
pF
Turn-On Delay Time
t
d(on)
I
D
= –15 A
40
ns
Rise Time
t
r
V
GS(on)
= –10 V
220
ns
Turn-Off Delay Time
t
d(off)
V
DD
= –30 V
600
ns
Fall Time
t
f
R
G
= 10
380
ns
Total Gate Charge
Q
G
I
D
= –30 A
140
nC
Gate to Source Charge
Q
GS
V
DD
= –48 V
12
nC
Gate to Drain Charge
Q
GD
V
GS
= –10 V
46
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30 A, V
GS
= 0
0.8
1.5
V
Reverse Recovery Time
t
rr
I
F
= 30 A, V
GS
= 0
160
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
400
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
PG.
V
DD
R
L
R
G
= 10
R
G
t
V
GS
0
t = 1 s
Duty Cycle
≤
1%
GS
Wave Form
V
GS
V
GS(on)
I
D
0
D
10 %
10 %
90 %
90 %
90 %
I
D
t
f
t
r
t
d(off)
t
d(on)
t
on
t
off
10 %
D
Wave Form
D.U.T.
I
G
= 2 mA
PG.
V
DD
R
L
50
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ495-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -30A 30m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220 Isolated |
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