參數(shù)資料
型號(hào): 2SJ484WYTL-E
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-62, UPAK -3
文件頁數(shù): 6/9頁
文件大?。?/td> 92K
代理商: 2SJ484WYTL-E
2SJ484
Rev.3.00 Sep 07, 2005 page 4 of 6
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –2 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
5
0.5
1
2
0.05
0.1
0.2
–0.01 –0.02 –0.05 –0.1
–1
–0.5
–0.2
–5
–2
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1
–0.2
–0.5
–1
–2
–5
–10
500
200
50
100
20
5
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
100
50
20
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
500
200
100
20
50
10
5
–0.2
–0.5
–1
–2
–5
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –5 V
–10 V
–25 V
VDD = –5 V
–10 V
–25 V
VGS = –10 V
–0.5 A, –1.0 A
VGS = –10 V, VDD = –10 V
duty
≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ484WYTR-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ485 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
2SJ485TP 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR
2SJ485TP-FA 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
2SJ486 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET Low FrequencyPower Switching