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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MICROPAK-3 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 42K |
| 代理商： | 2SJ484 |
2SJ484
4
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1 –0.3
–1
–3
–10
–30
–100
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
–10 V –6 V
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
–5
1 ms
Ta = 25
°C
DC
Operation
100
s
PW
=
10
ms
(1
shot)
V
= –2.5 V
GS
–4 V
–3 V
–5 V
–4.5 V
–3.5 V
Tc = 75
°C
25
°C
–25
°C
Channel
Dissipation
Pch
(W)
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
Pulse Test
V
= –10 V
Pulse Test
DS
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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