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參數(shù)資料
| 型號： | 2SJ483 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SJ483 |
2SJ483
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
resistance
R
DS(on)
—
0.08
0.11
I
D = –2.5A
V
GS = –10V*
1
R
DS(on)
—
0.12
0.17
I
D = –2.5A
V
GS = –4V*
1
Forward transfer admittance
|y
fs|
35—
S
I
D = –2.5A,
V
DS = –10V*
1
Input capacitance
Ciss
—
630
—
pF
V
DS = –10V
Output capacitance
Coss
—
390
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
135
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
15
—
ns
V
GS = –10V, ID = –2.5A
Rise time
t
r
—
70
—
ns
R
L = 4
Turn-off delay time
t
d(off)
—65
—
ns
Fall time
t
f
—60
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.0
—
V
I
D = –5A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
60
—
ns
I
F = –5A, VGS = 0
diF/ dt = 20A/
s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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