參數(shù)資料
型號: 2SJ476-01
文件頁數(shù): 1/9頁
文件大?。?/td> 45K
代理商: 2SJ476-01
2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-541 (Z)
1st. Edition
Sep. 1997
Features
Low on-resistance
R
DS(on) = 25 m typ.
4V gate drive devices.
High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關PDF資料
PDF描述
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2SK11 TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-17
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相關代理商/技術參數(shù)
參數(shù)描述
2SJ476-01L 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET
2SJ476-01L_06 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ476-01LSC 制造商:Fuji Electric 功能描述:
2SJ476-01S 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ477-01MR 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET