- 您現(xiàn)在的位置：買賣IC網 > PDF目錄49989 > 2SJ471-E 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SJ471-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SJ471-E |
2SJ471
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–30
A
Drain peak current
ID (pulse)
Note 1
–120
A
Body-Drain diode reverse Drain current
IDR
–30
A
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–30
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on) 1
—
25
35
m
ID = –15 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on) 2
—
40
60
m
ID = –15 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
12
20
—
S
ID = –15 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
1700
—
pF
Output capacitance
Coss
—
950
—
pF
Reverse transfer capacitance
Crss
—
260
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
20
—
ns
Rise time
tr
—
290
—
ns
Turn-off delay time
td (off)
—
170
—
ns
Fall time
tf
—
130
—
ns
ID = –15 A
VGS = –10 V
RL = 0.67
Body-Drain diode forward voltage
VDF
—
–1.1
—
V
IF = –30 A, VGS = 0
Body-Drain diode reverse recovery time
trr
—
70
—
ns
IF = –30 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ494 | 20 A, 60 V, 0.088 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ494-AZ | 20 A, 60 V, 0.088 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ497 | 100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2863 | 100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ503TP | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ472-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SJ472-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。