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參數(shù)資料
| 型號： | 2SJ465 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-5K1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 375K |
| 代理商： | 2SJ465 |
2SJ465
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ465
DCDC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.54 (typ.)
High forward transfer admittance : |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 A (max)
(VDS = 16 V)
Enhancement mode
: Vth = 0.5~1.1 V
(VDS = 10 V, ID = 200 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
16
V
Draingate voltage (RGS = 20 k)
VDGR
16
V
Gatesource voltage
VGSS
±8
V
DC
(Note 1)
ID
2
Drain current
Pulse (Note 1)
IDP
6
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
250
°C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
Z
9
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ465_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SJ466 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ466-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35AZP |
| 2SJ467 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ468 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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