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參數(shù)資料
| 型號(hào)： | 2SJ459 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 32K |
| 代理商： | 2SJ459 |
2SJ459
No.5423-2/4
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
--450
±
30
--4
PW
≤
10
μ
s, duty cycle
≤
1%
--16
1.65
70
150
Allowable Power Dissipation
PD
Tc=25
°
C
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
--450
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Marking : J459
*(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source.
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
ID=--10mA, VGS=0
VDS=--360V, VGS=0
VGS=
±
30V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=--4A, VGS=0
IS=--4A, di / dt=100A /
μ
s
V
--1.0
±
100
--3.0
mA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
--2.0
1.2
2.4
2.0
2.8
1500
230
80
35
50
300
80
-1.5
195
150
Switching Time Test Circuit
PW=10
μ
s
D.C.
≤
1%
0V
--10V
VIN
P.G
50
G
S
ID= --2A
RL=100
VOUT
VDD= --200V
2SJ459
VIN
D
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| 2SJ460 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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