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參數(shù)資料
| 型號： | 2SJ450 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 44K |
| 代理商： | 2SJ450 |
2SJ450
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltage drain current I
DSS
Gate to source leak current
—
—
–50
μ
A
μ
A
V
DS
= –50 V, V
GS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –0.5 A
V
GS
= –4 V*
1
I
D
= –0.3 A
V
GS
= –2.5 V*
1
I
D
= –0.5 A
V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
GSS
V
GS(off)
R
DS(on)
—
—
±
10
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
0.85
1.2
Static drain to source on state
resistance
R
DS(on)
—
1.1
1.9
Fowerd transfer admittance
|y
fs
|
0.6
1.0
—
S
Input capacitance
Ciss
—
150
—
pF
Output capacitance
Coss
—
72
—
pF
Reverse transfer capacitance
Crss
—
24
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
6
—
ns
V
GS
= –10 V, I
D
= –0.5 A
R
L
= 60
Rise time
—
9
—
ns
Turn-off delay time
—
50
—
ns
Fall time
—
35
—
ns
Body to drain diode forward
voltage
—
–0.9
—
V
I
F
= –1 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse Test
Marking is "UY".
t
rr
—
100
—
ns
I
= –1 A, V
GS
= 0
diF/dt = 50A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ452 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
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