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參數(shù)資料
| 型號： | 2SJ449 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SJ449 |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)
= 0.8
MAX. (@ V
GS
= –10 V, I
D
= –3.0 A)
Low C
iss
C
iss
= 1040 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
≤
10
μ
s, Duty Cycle
≤
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= –20 V
→
0
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
T1
–250
m
30
m
6.0
m
24
35
2.0
150
V
V
A
A
W
W
C
C
A
mJ
T
ch
T
stg
I
AS
E
AS
–55 to +150
–6.0
180
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
1995
DATA SHEET
Drain
Source
Body
Diode
Gate
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
1
3
1
1
M
4
1.3 ±0.2
1.5 ±0.2
2.54
2.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
1
2 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ449-AZ | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,250V,6.0A,0.55ohm,isoTO-220 |
| 2SJ450 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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