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參數(shù)資料
| 型號(hào)： | 2SJ410-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 1120K |
| 代理商： | 2SJ410-E |
2SJ410
Rev.3.00 Jun 05, 2006 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–6
A
Drain peak current
ID (pulse)
Note 1
–24
A
Body to drain diode reverse drain current
IDR
–6
A
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
0.7
0.85
ID = –3 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
2.0
3.2
—
S
ID = –3 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
900
—
pF
Output capacitance
Coss
—
280
—
pF
Reverse transfer capacitance
Crss
—
65
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
18
—
ns
Rise time
tr
—
50
—
ns
Turn-off delay time
td (off)
—
90
—
ns
Fall time
tf
—
40
—
ns
ID = –3 A
VGS = –10 V
RL = 10
Body to drain diode forward voltage
VDF
—
–1.0
—
V
IF = –6 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
220
—
ns
IF = –6 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ411 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL SIGNAL MOS FET FOR SWITCHING |
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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