- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370098 > 2SJ386 (Hitachi,Ltd.) Silicon P-Channel MOS FET PDF資料下載
參數(shù)資料
| 型號： | 2SJ386 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 38K |
| 代理商： | 2SJ386 |
2SJ386
4
–5
–4
–3
–2
–1
0
Gate to Source Voltage V (V)
V
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
–4
–8
–12
–16
–20
I = –5 A
–3 A
–1 A
Ta = 25 °C
Pulse Test
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25 °C
Pulse Test
–0.1
–1
–10
2
5
1
0.2
0.5
0.1
–0.2
–0.5
–2
–5
–10 V
V = –4 V
1.0
0.8
0.6
0.4
0.2
–40
0
40
80
120
160
Ambient Temperature Ta (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
–1 A
–3 A
I = –3 A
V = –4 V
V = –10 V
I = –5 A
–1 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
–0.1
–1
–10
75 °C
25 °C
V = –10 V
Pulse Test
10
2
5
1
0.2
0.5
0.1
–0.2
–0.5
–2
–5
Ta = –25 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ387 | Silicon P-Channel MOS FET |
| 2SJ387L | Silicon P-Channel MOS FET |
| 2SJ387S | Silicon P-Channel MOS FET |
| 2SJ388 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388L | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。