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參數(shù)資料
| 型號： | 2SJ377 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-64, 2-7B1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 748K |
| 代理商： | 2SJ377 |
Data Sheet D15063EJ1V0DS
2
2SK3481
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 15 A9
18
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 15 A40
50
m
RDS(on)2
VGS = 4.5 V, ID = 15 A44
58
m
Input Capacitance
Ciss
VDS = 10 V
2300
pF
Output Capacitance
Coss
VGS = 0 V
230
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 15 A13
ns
Rise Time
tr
VGS = 10 V10
ns
Turn-off Delay Time
td(off)
RG = 0
53
ns
Fall Time
tf
5.0
ns
Total Gate Charge
QG
VDD = 80 V48
nC
Gate to Source Charge
QGS
VGS = 10 V7.0
nC
Gate to Drain Charge
QGD
ID = 30 A12
nC
Body Diode Forward Voltage
VF(S-D)
IF = 30 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
160
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ377(Q) | 制造商:Toshiba 功能描述:Pch -60V -5A PW-MOLD(5.5~6.8) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SJ377(TE16L1,NQ) | 功能描述:MOSFET P-Ch 60V 5A Rdson 0.19 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ377(TE16R) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16R1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
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