參數資料
型號: 2SJ349
元件分類: JFETs
英文描述: 20 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁數: 2/6頁
文件大?。?/td> 387K
代理商: 2SJ349
2SJ349
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 10 A
50
90
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
33
45
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
20
S
Input capacitance
Ciss
2800
Reverse transfer capacitance
Crss
450
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1300
pF
Rise time
tr
15
Turnon time
ton
35
Fall time
tf
25
Switching time
Turnoff time
toff
120
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
90
Gatesource charge
Qgs
65
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 20 A
25
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
20
A
Pulse drain reverse current
(Note 1)
IDRP
80
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
75
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V,
dIDR / dt = 50 A / s
83
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
J349
Part No. (or abbreviation code)
相關PDF資料
PDF描述
2SJ350-E 6 A, 120 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SJ355 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ359TP 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
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相關代理商/技術參數
參數描述
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