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參數(shù)資料
| 型號： | 2SJ344 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-2E1E, USM, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 163K |
| 代理商： | 2SJ344 |
2SJ344
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications
Analog Switch Applications
Low threshold voltage: Vth = 0.8~2.5 V
High speed
Enhancement-mode
Small package
Complementary to 2SK1827
Marking
Equivalent Circuit
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
-50
V
Gate-source voltage
VGSS
-7
V
DC drain current
ID
-50
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gateate leakage current
IGSS
VGS = -7 V, VDS = 0
-1
mA
Drain-source breakdown voltage
V (BR) DSS
ID = -100 mA, VGS = 0
-50
V
Drain cut-off current
IDSS
VDS = -50 V, VGS = 0
-1
mA
Gate threshould voltage
Vth
VDS = -5 V, ID = -0.1 mA
-0.8
-2.5
V
Forward transfer admittance
Yfs
VDS = -5 V, ID = -10 mA
15
mS
Drain-source ON resistance
RDS (ON)
ID = -10 mA, VGS = -4 V
20
50
W
Input capacitance
Ciss
VDS = -5 V, VGS = 0, f = 1 MHz
10.5
pF
Reverse transfer capacitance
Crss
VDS = -5 V, VGS = 0, f = 1 MHz
1.9
pF
Output capacitance
Coss
VDS = -5 V, VGS = 0, f = 1 MHz
7.2
pF
Turn-on time
ton
0.15
Switching time
Turn-off time
toff
VDD = -5 V, ID = -10 mA,
VGS = 0~-4 V
0.13
ms
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
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| 2SJ345 | 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
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|---|---|
| 2SJ344(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 50V 0.05A 3-Pin USM T/R Cut Tape |
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| 2SJ345_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| 2SJ346 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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