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參數(shù)資料
| 型號： | 2SJ292 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2SJ292 |
2SJ292
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±200 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –15 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.25
V
Static drain to source on state
resistance
—
0.033
0.043
1
—
0.045
0.06
S
I
D
= –15 A, V
GS
= –4 V*
I
D
= –15 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|y
fs
|
Ciss
17
25
—
1
Input capacitance
—
3300
—
pF
Output capacitance
Coss
—
1500
—
pF
Reverse transfer capacitance
Crss
—
480
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D
= –15 A, V
GS
= –10 V,
R
L
= 2
Rise time
t
r
t
d(off)
t
f
V
DF
—
170
—
ns
Turn-off delay time
—
500
—
ns
Fall time
—
390
—
ns
Body to drain diode forward
voltage
—
–1.5
—
V
I
F
= –30 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
200
—
ns
I
F
= –30 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SJ280
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ293 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ294 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ295 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220FN |
| 2SJ296(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ296(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ292-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ293 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
| 2SJ294 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET |
| 2SJ295 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ295(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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