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參數(shù)資料
| 型號(hào)： | 2SJ289 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SJ289 |
2SJ280(L), 2SJ280(S)
7
Dynamic Input Characteristics
0
–20
–40
–60
–80
–1000
40
Gate Charge Qg (nc)
80
120
160
200
0
–4
–8
–12
–16
–20
D
D
V = –10 V
–25 V
–50 V
–50 V
V = –10 V
V
I = –30 A
DS
G
G
V
GS
Switching Characteristics
Drain Current I (A)
–0.5 –1
–2
–5
–10 –20
–50
10
20
50
100
200
500
1000
S
t
t (off)
V = –10 V, V –30 V
PW = 2 s, duty 1%
t (on)
t
<
f
r
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–30
–20
–10
00
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage V (V)
SD
R
D
Pulse Test
–5 V
0, 5V
V = –10 V
Channel Temperature Tch (°C)
R
A
I = –30 A
V = –25 V
duty < 0.1%
Rg 50
>
DD
Maxmum Avalanche Energy vs.
Channel Temperature Derating
100
80
60
40
20
0
25
50
75
100
125
150
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|---|---|
| 2SJ280 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ280L | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ280S | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ285 | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) |
| 2SJ290 | Silicon P Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ290 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ291 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ292 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB |
| 2SJ292-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ293 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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