參數(shù)資料
型號(hào): 2SJ285
元件分類: 小信號(hào)晶體管
英文描述: 250 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CP, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 106K
代理商: 2SJ285
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4221
2SJ285
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/92793TH (KOTO) X-8895 No.4221–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2091A
[2SJ285]
Features
Low ON resistance.
Ultrahigh-speed switching.
Low-voltage drive.
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Source
3 : Drain
SANYO : CP
PW
≤10s, duty cycle≤1%
Marking : BM
Continued on next page.
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
)
R
B
(
ID
V
,
A
m
1
=
S
G
0
=0
6
–V
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
-
o
r
e
ZI
S
D
V S
D
V
,
V
0
6
=
S
G
0
=0
0
1
–A
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
r
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
2
1
±
=
S
D
0
=0
1
±A
e
g
a
t
l
o
V
f
o
t
u
CV
)
f
o
(
S
G
V S
D
I
,
V
0
1
=
D
A
m
1
=0
.
1
–0
.
2
–V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
I
,
V
0
1
=
D
A
m
0
5
1
=0
0
20
5
3S
m
e
c
n
a
t
s
i
s
e
R
e
t
a
t
S
-
N
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
c
i
t
a
t
S
R
)
n
o
(
S
D
ID
V
,
A
m
0
5
1
=
S
G
V
0
1
=2
.
20
.
3
R
)
n
o
(
S
D
ID
V
,
A
m
0
5
1
=
S
G
V
4
=0
.
30
.
4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
0
6
–V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
5
1
±V
)
C
D
(
t
n
e
r
u
C
n
i
a
r
DID
0
5
2
–A
m
)
e
s
l
u
P
(
t
n
e
r
u
C
n
i
a
r
DI P
D
1
–A
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
0
5
2W
m
e
r
u
t
a
r
e
p
m
e
T
l
e
n
a
h
Ch
c
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
相關(guān)PDF資料
PDF描述
2SJ300 10 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-126
2SJ308 9 A, 250 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220ML
2SJ308 9 A, 250 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220ML
2SJ312(2-10S2B) 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ312(2-10S1B) 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ286 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236
2SJ287 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:P-Channel MOS Silicon FET
2SJ288 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications
2SJ289 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ290 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET