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參數(shù)資料
| 型號： | 2SJ247-E |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SJ247-E |
2SJ247
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
Drain peak current
ID (pulse)
Note 1
–32
A
Body to drain diode reverse drain current
IDR
–8
A
Channel dissipation
Pch
Note 2
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–100
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –80 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.25
0.3
ID = –4 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.3
0.45
ID = –4 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
3.0
5.5
—
S
ID = –4 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
880
—
pF
Output capacitance
Coss
—
325
—
pF
Reverse transfer capacitance
Crss
—
80
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
12
—
ns
Rise time
tr
—
47
ns
Turn-off delay time
td (off)
—
150
—
ns
Fall time
tf
—
75
—
ns
ID = –4 A
VGS = –10 V
RL = 7.5
Body to drain diode forward voltage
VDF
—
–1.0
—
V
IF = –8 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
170
—
ns
IF = –8 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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PDF描述 |
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| 2SJ248-E | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ248 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SJ252 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-220AB |
| 2SJ253 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-220AB |
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