參數(shù)資料
型號： 2SJ200
元件分類： JFETs
英文描述： 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封裝： 2-16C1B, 3 PIN
文件頁數(shù)： 2/5頁
文件大小： 430K
代理商： 2SJ200
2SJ200
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cutoff current
IDSS
VDS = 180 V, VGS = 0
―
1.0
mA
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
―
±0.5
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
―
V
Gatesource cutoff voltage
(Note 2)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.8
―
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 6 A, VGS = 10 V
―
1.5
5.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
―
4.0
―
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
―
1300
―
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
―
350
―
Reverse transfer capacitance
Crss
VDS = 30 V, VGS = 0, f = 1 MHz
―
200
―
pF
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
相關(guān)PDF資料
PDF描述
2SJ203-T2B 200 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ204 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-AZ 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-AZ 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-T2 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ200_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power Amplifier Application
2SJ200O 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
2SJ200Y 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
2SJ200-Y 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 180V 10A 3PIN TO-3P(N) - Rail/Tube
2SJ200-Y(F) 制造商:Toshiba 功能描述:Pch -180V -10A 0.83@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 180V 10A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,180V/10A,0.83ohm,TO-3P(N)
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