
2SJ168
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
±100
nA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 1 mA, VGS = 0
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2
3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, ID = 50 mA
100
mS
Drain-source ON resistance
RDS (ON)
ID = 50 mA, VGS = 10 V
1.3
2.0
Ω
Drain-source ON voltage
VDS (ON)
ID = 50 mA, VGS = 10 V
65
100
mV
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
73
85
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
15
22
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
48
60
pF
Rise time
tr
8
Turn-on time
ton
14
Fall time
tf
35
Switching time
Turn-off Time
toff
VIN: tr, tf < 5 ns
D.U. <= 1% (Zout = 50 Ω)
100
ns