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參數(shù)資料
| 型號(hào)： | 2SJ133-Z-AZ |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 130K |
| 代理商： | 2SJ133-Z-AZ |
1998
Document No. D16193EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Gate drive available at logic level (VGS = –4 V)
High current control available in small
dimension due to low RDS(on) (
0.45 )
2SJ133-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC
Semiconductor
Devices”
(Document
No.
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain to source voltage
VDSS
VGS = 0
60
V
Gate to source voltage
VGSS
VDS = 0
–
+20
V
Drain current (DC)
ID(DC)
TC = 25
°C
–
+2.0
A
Drain current (pulse)
ID(pulse)
PW
≤ 300
s
duty cycle
≤ 10 %
–
+8.0
A
Total power dissipation
PT
TC = 25
°C
20
W
Total power dissipation
PT
Ta = 25
°C
1.0*, 2.0**
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
* Printing board mounted
** 7.5 cm
2
× 0.7 mm ceramic board mounted
INTERNAL
EQUIVALENT CIRCUIT
Electrode connection
<1> Gate (G)
<2> Drain (D)
<3> Source (S)
<4> Fin (drain)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ133 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z-T1 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z-T2 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133 | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ133-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 3-Pin(2+Tab) TO-252 T/R Bulk |
| 2SJ134 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ135 | 制造商:NEC 制造商全稱:NEC 功能描述:FAST SWITCHING P-CHANNEL SILICON POWER MOS FET |
| 2SJ135-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOS Field Effect Power Transistors |
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