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參數(shù)資料
| 型號： | 2SJ132-Z |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | MP-3Z, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 247K |
| 代理商： | 2SJ132-Z |
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MOS FIELD EFFECT POWER TRANSISTOR
2SJ132,132-Z
P-CHANNEL POWER MOSFET
FOR SWITCHING
DATA SHEET
Document No. D16192EJ4V0DS00 (4th edition)
Date Published January 2007 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
Gate drive available at logic level (VGS =
4 V)
High current control available in small dimension due to low RDS(on) (
0.25 Ω)
2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain to source voltage
VDSS
VGS = 0 V
30
V
Gate to source voltage
VGSS
VDS = 0 V
m20
V
Drain current (DC)
ID(DC)
TC = 25
°C
m2.0
A
Drain current (pulse)
ID(pulse)
PW
≤ 300
μs
duty cycle
≤ 10%
m8.0
A
Total power dissipation
PT1
TC = 25
°C
20
W
Total power dissipation
PT2
TA = 25
°C
1.0
Note 1, 2.0 Note 2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Note 1. Printing board mounted
2. 7.5 cm
2 × 0.7 mm ceramic board mounted
PACKAGE DRAWING (UNIT: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
EQUIVALENT CIRCUIT
Source
Internal
diode
Gate
Drain
Electrode connection
1. Gate
2. Drain
3. Source
4. Fin (drain)
TO-252 (MP-3Z)
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
TO-251 (MP-3)
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ132 | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AB |
| 2SJ133-Z | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AB |
| 2SJ133 | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ144-GR | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ144-BL | P-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ132-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 Bulk |
| 2SJ133 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOS Field Effect Power Transistors |
| 2SJ133-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -2A 800m@10V TO251 Cut Tape |
| 2SJ133-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ133-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 3-Pin(2+Tab) TO-252 T/R Bulk |
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