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參數(shù)資料
| 型號： | 2SJ105-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1B, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 0K |
| 代理商： | 2SJ105-Y |
2SJ105
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
Complimentary to 2SK330
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.3
6.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.0
4.0
mS
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
IDSS = 5 mA
270
Ω
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
18
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3.6
pF
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
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