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參數(shù)資料
| 型號(hào)： | 2SH28 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel IGBT High Speed Power Switching |
| 中文描述： | 硅?通道高速I(mǎi)GBT的功率開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH28 |
2SH28
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
V
CES
V
GES
I
C
ic(peak)
600
V
Gate to Emitter voltage
±
20
V
Collector current
20
A
Collector peak current
40
A
Collector dissipation
P
C
Tj
Note1
60
W
Channel temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I
CES
—
—
100
μ
A
V
CE
= 600V, V
GE
= 0
Gate to emitter leak current
I
GES
V
GE(off)
V
CE(sat)
—
—
±
1
μ
A
V
GE
=
±
20 V, V
CE
= 0
I
C
= 20 mA, V
CE
= 10V
I
C
= 20 A, V
GE
= 15V
Gate to emitter cutoff voltage
6.0
—
8.0
V
Collector to emitter saturation
voltage
—
2.1
2.6
V
Input capacitance
Cies
—
1200
—
pF
V
= 10V, V
GE
= 0
f = 1MHz
Switching time
t
r
t
on
t
f
t
off
—
150
—
ns
I
C
= 20 A
R
L
= 15
V
GS
=
±
15V
Rg = 50
—
230
—
ns
—
300
600
ns
—
450
900
ns
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