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參數(shù)資料
| 型號(hào)： | 2SD991(K) |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SD991(K) |
2SD991(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
500
V
I
C = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
V
CEO(sus)
300
—
V
I
C = 4 A, PW = 50 s,
f = 50Hz, L = 10 mH
Emitter to base breakdown
V
(BR)EBO
7
——V
I
E = 100 mA, IC = 0
voltage
———V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CEO
—
100
A
V
CE = 300 V, RBE = _
DC current transfer ratio
h
FE
500
—
V
CE = 2 V, IC = 4 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.5
V
I
C = 4 A, IB = 40 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
2.0
V
Turn on time
t
on
—
2.0
—
s
I
C = 4 A, IB1 = –IB2 = 40 mA
Turn off time
t
off
—23
—
s
Note:
1. Pulse test.
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
20
40
60
0.003
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
20
5
10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
0.5 1.0 2
5
10 20
50 100 200 500
Area of Safe Operation
PW
=
1
ms
1
shot
PW
=
10
ms
1
shot
DC
Operation
(T
C =
25
°C)
iC (peak)
IC (max)
T
a = 25
°C
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| 2SD992-ZK | 2 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 2SD992-ZN | 2 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 2SD992-ZM | 2 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 2SD992-Z | 2 A, 30 V, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD992 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
| 2SD992-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD992-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD992K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD992L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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