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參數(shù)資料
| 型號： | 2SD974 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SD974 |
2SD974
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
I
C(surge)
P
C
Tj
120
V
Collector to emitter voltage
60
V
Emitter to base voltage
5
V
Collector current
1
A
Collector peak current
1.5
A
Surge collector current
4
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
—
—
1.0
μ
A
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 1 A*
1
I
C
= 1 A, I
B
= 0.05 A*
1
DC current transfer ratio
150
—
—
Collector to emitter saturation
voltage
—
—
0.3
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.2
MHz
Fall time
Note:
t
f
—
0.4
—
pF
I
CP
= 1 A, I
B1
= –I
B2
= 50 mA*
1
1. Pulse test
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