- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371522 > 2SD966 (PANASONIC CORP) For Low-Frequency Amplification PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD966 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For Low-Frequency Amplification |
| 中文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92L-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 67K |
| 代理商： | 2SD966 |
Transistors
2SD0966
(2SD966)
Silicon NPN epitaxial planar type
1
Publication date: April 2003
SJC00201BED
For low-frequency amplification
For stroboscope
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
5
A
Peak collector current
I
CP
8
A
Collector power dissipation
P
C
T
j
1
W
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
V
EBO
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
= 2 V, I
C
= 0.5 A
20
V
Emitter-base voltage (Collector open)
7
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
I
EBO
h
FE1 *2
0.1
180
600
h
FE
V
CE
= 2 V, I
C
= 2 A
I
C
=
3 A, I
B
=
0.1 A
V
CB
=
6 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
150
Collector-emitter saturation voltage
*1
V
CE(sat)
f
T
C
ob
1
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
50
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
5.9
±
0.2
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
2.54
±
0.15
(
(1.27)
(1.27)
0.45
+0.2
0.45
+0.2
1
3
2
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank
P
Q
R
h
FE1
180 to 270
230 to 380
340 to 600
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD0968A | For Low-Frequency Driver Amplification |
| 2SD0973A | For Low-Frequency Driver Amplification |
| 2SD1009 | 2SD1009 |
| 2SD1010 | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD1011 | Silicon NPN epitaxial planer type For low-frequency amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD966Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SC-51 |
| 2SD966R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SC-51 |
| 2SD968 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-62100V .5A 1W ECB SURFACE MOUNT 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD968A | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. SC-62120V .5A .5W ECB SURFACE MOUNT |
| 2SD968AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-62 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。