參數(shù)資料
型號(hào): 2SD965A-X-AB3-R
廠商: 友順科技股份有限公司
英文描述: LOW VOLTAGE HIGH CURRENT TRANSISTOR
中文描述: 低電壓高電流晶體管
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 65K
代理商: 2SD965A-X-AB3-R
2SD965/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R209-007,B
T Y PICAL CHARACT ERIS T ICS
Static Characteristics
Collector-Emitter Voltage ( V)
C
C
(
0
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
DC Current Gain
Collector Current, I
C
(mA)
D
F
V
CE
=2V
10
0
10
1
10
2
10
3
10
-1
10
1
10
2
10
3
10
4
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=0.5mA
Base-Emitter on Voltage
Collector Current, I
C
(mA)
S
Saturation Voltage
I
C
=30·I
B
Ta=75
-25
25
V
CE
=2V
0
1
2
3
4
5
6
0
0.8
1.2
1.6
2.0
Base to Emitter Voltage, V
BE
(V)
0.4
C
C
(
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
10
4
V
BE(SAT)
V
CE(SAT)
Current Gain-Bandwidth Product
Collector Output Capacitance
Collector Current, I
C
(mA)
C
f
T
(
V
CE
=6V
Collector-Base Voltage (V)
C
o
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
相關(guān)PDF資料
PDF描述
2SD965A-X-T92-B LOW VOLTAGE HIGH CURRENT TRANSISTOR
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