參數(shù)資料
型號: 2SD965A-Q-TN3-T
廠商: 友順科技股份有限公司
英文描述: LOW VOLTAGE HIGH CURRENT TRANSISTOR
中文描述: 低電壓高電流晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 65K
代理商: 2SD965A-Q-TN3-T
2SD965/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-007,B
ABS OLUT E MAX IMUM RAT ING
(Ta=25
)
PARAMETER
SYMBOL
V
CBO
RATINGS
40
20
30
7
500
750
1
5
150
-65 ~ +150
UNIT
V
V
V
V
mW
mW
W
A
Collector-Base Voltage
Collector-Emitter Voltage 2SD965
Emitter-Base Voltage
V
CEO
V
EBO
SOT-89
TO-92
TO-252
Collector Dissipation
P
C
Collector Current
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
C
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
TEST CONDITIONS
I
C
=100
μ
A, I
E
=0
MIN
40
20
30
7
230
150
TYP
200
150
MAX
100
100
800
1
50
UNIT
V
V
V
V
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter
Breakdown Voltage 2SD965A
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
2SD965
BV
CEO
I
C
=1mA, I
B
=0
BV
EBO
I
CBO
I
EBO
I
E
=10
μ
A, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=1mA
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
= 0.1A
V
CE
=6V, I
C
=50mA
V
CB
=20V, I
E
=0, f=1MHz
DC Current Gain(note)
h
FE
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
CE(SAT)
f
T
C
ob
V
MHz
pF
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
Q
R
S
230-380
340-600
560-800
相關(guān)PDF資料
PDF描述
2SD965A-S-TN3-T LOW VOLTAGE HIGH CURRENT TRANSISTOR
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