- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄30597 > 2SD946BQ (PANASONIC CORP) 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD946BQ |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | 2SD946BQ |
Power Transistors
1
Publication date: February 2004
SJD00164CED
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0946
VCBO
30
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage 2SD0946
VCEO
25
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0946
VCBO
IC = 100 A, IE = 030
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage
2SD0946
VCEO
IC = 1 mA, IB = 025
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
IE = 100 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
0.1
A
Forward current transfer ratio *
1, 2
hFE
VCE = 10 V, IC = 1 A
4 000
40 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1 A, I
B
= 1 mA
1.8
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 1 A, IB = 1 mA
2.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
150
MHz
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
≈ 200
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD946BS | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD946AS | 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD946AQ | 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD946R | 1 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD956 | 2.5 A, 1500 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD946BR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD946BS | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD946P | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:SI NPN EPITAXIAL PLANAR DARLINGTON |
| 2SD946Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD946R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。