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參數(shù)資料
| 型號： | 2SD882S |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 75K |
| 代理商： | 2SD882S |
UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-024,A
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
-Collector-Emitter voltage(V)
-
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
Tc,Case Temperature(°C)
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB-IB=7mA
-IB=9mA
Fig.2 Derating curve of safe
operating areas
-
200
150
100
50
0
-50
0
50
100
150
Sblmted
Dsipaionlmted
Tc,Case Temperature(°C)
200
150
100
50
0
-50
Fig.3 Power Derating
P
0
4
8
12
Fig.4 Collector Output
capacitance
-Collector-Base Voltage(v)
O
100
10-1
10-2
10-3
101
102
103
100
I
E
=0
f=1MHz
Fig.5 Current gain-
bandwidth product
F
T
(
b
101
102
103
100
V
CE
=5V
Collector-Emitter Voltage
-
Fig.6 Safe operating area
Ic(max),DC
Ic(max),Pulse
10mS
1mS
01mS
Ic,Collector current(A)
Fig.7 DC current gain
-Ic,Collector current(mA)
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
D
101
102
103
100
-
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
10-2
10-1
100
101
10-2
10-1
100
101
100
101
102
100
101
102
103
104
100
101
102
103
104
100
101
102
103
104
I
B
=8mA
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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