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參數(shù)資料
| 型號： | 2SD882L-E-TN3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 中文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SD882L-E-TN3-T |
2SD882
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-003,C
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified )
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
RATINGS
40
30
5
3
7
0.6
0.5
UNIT
V
V
V
A
A
A
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Pulse
Collector Current
Base Current
TO-92NL
TO-251/TO-252/
TO-126/TO-126C
Collector Dissipation Ta=25
P
C
1
W
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
+150
-55 ~ +150
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
30
100
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
400
0.5
2.0
UNIT
V
V
V
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: PW<300
μ
s, Duty Cycle<2%
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
Q
P
E
100-200
160-320
200-400
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD882L-F-T6C-B | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-K | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-R | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-T | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T9N-B | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD882L-F-T6C-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T6C-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882L-F-T9N-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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