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參數(shù)資料
| 型號： | 2SD789-D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SD789-D |
2SD789
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
1A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
1
AV
CB = 80 V, IE = 0
Emitter cutoff current
I
EBO
—
0.2
AV
EB = 6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
800
V
CE = 2 V, IC = 0.1A
Collector to emitter saturation
voltage
V
CE(sat)
—
0.3
V
I
C = 1 A, IB = 0.1 A
Gain bandwidth product
f
T
—
100
—
MHz
V
CE = 2 V, IC = 10 mA
Collector output capacitance
Cob
—
20
—
pF
V
CB = 10 V, IE = 0, f = 1MHz
Note:
1. The 2SD789 is grouped by h
FE as follows.
BC
D
E
100 to 200
160 to 320
250 to 500
400 to 800
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PDF描述 |
|---|---|
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| 2SD794A-Q | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD789DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD789E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD789ETZE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD789ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD792 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANS. TO-31500V 5A 35W BEC |
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