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參數(shù)資料
| 型號： | 2SD768(K) |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SD768(K) |
2SD768(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
100
AV
CB = 120 V, IE = 0
I
CEO
——
10
AV
CE = 100 V, RBE=∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 3 A*
1
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
CE(sat)2
—
3VI
C = 6A, IB = 60 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2VI
C = 3 A, IB = 6 mA*
1
voltage
V
BE(sat)2
—
3.5
V
I
C = 6 A, IB = 60 mA*
1
Turn on time
t
on
—
1.0
—
sI
C = 3 A, IB1 = –IB2 = 6 mA
Turn off time
t
off
—
3.0
—
sI
C = 3 A, IB1 = –IB2 = 6 mA
Note:
1. Pulse test.
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
30
10
3
1.0
0.3
0.1
Collector
current
I
C
(A)
0.03
1
3
30
300
10
100
1,000
Collector to emitter voltage VCE (V)
iC(peak)
IC(max)
DC
Operation(T
C =
25
°C)
PW
=
10
ms
1
ms
100
s
Area of Safe Operation
Ta = 25
°C
1 shot pulse
1
s
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