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參數(shù)資料
| 型號(hào)： | 2SD756E |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 中文描述： | 晶體管|晶體管| npn型| 120伏特五（巴西）總裁| 50mA的一（c）|至92VAR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 31K |
| 代理商： | 2SD756E |
2SD755, 2SD756, 2SD756A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SD755
2SD756
2SD756A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
100
120
140
V
Collector to emitter voltage
100
120
140
V
Emitter to base voltage
5
5
5
V
Collector current
50
50
50
mA
Collector power dissipation
750
750
750
mW
Junction temperature
150
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
100
—
—
120
—
—
140
—
—
V
I
C
= 1 mA,
R
BE
=
∞
Collector to base
breakdown voltage
V
(BR)CBO
100
—
—
120
—
—
140
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
—
—
0.5
—
—
0.5
—
—
0.5
μ
A
V
CB
= 100 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
250
—
1200
250
—
800
250
—
500
V
CE
= 12 V,
I
C
= 2 mA
h
FE2
125
—
—
125
—
—
125
—
—
V
CE
= 12 V,
I
C
= 10 mA
Base to emitter voltage
V
BE
—
—
0.75
—
0.75
—
—
0.75
V
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
—
0.2
—
—
0.2
—
—
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Gain bandwidth product f
T
—
350
—
—
350
—
—
350
—
MHz V
CE
= 12 V,
I
C
= 5 mA
Collector output
capacitance
Cob
—
1.6
—
—
1.6
—
—
1.6
—
pF
V
CB
= 25 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SD755, 2SD756 and 2SD756A are grouped by h
FE1
as follows.
D
E
F
2SD755
250 to 500
400 to 800
600 to 1200
2SD756
250 to 500
400 to 800
—
2SD756A
250 to 500
—
—
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