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參數(shù)資料
| 型號(hào)： | 2SD756AE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 143K |
| 代理商： | 2SD756AE |
2SD755, 2SD756, 2SD756A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD755
2SD756
2SD756A
Unit
Collector to base voltage
V
CBO
100
120
140
V
Collector to emitter voltage
V
CEO
100
120
140
V
Emitter to base voltage
V
EBO
55
5V
Collector current
I
C
50
mA
Collector power dissipation
P
C
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
100
—
120
—
140
—
V
I
C = 1 mA,
R
BE = ∞
Collector to base
breakdown voltage
V
(BR)CBO
100
—
120
—
140
—
V
I
C = 10 A, IE = 0
Collector cutoff current
I
CBO
—
0.5
—
0.5
—
0.5
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
250
—
1200 250
—
800
250
—
500
V
CE = 12 V,
I
C = 2 mA
h
FE2
125
—
125
—
125
—
V
CE = 12 V,
I
C = 10 mA
Base to emitter voltage
V
BE
—
0.75
—
0.75
—
0.75
V
CE = 12 V,
I
C = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.2
—
0.2
—
0.2
V
I
C = 10 mA,
I
B = 1 mA
Gain bandwidth product f
T
—
350
—
350
—
350
—
MHz V
CE = 12 V,
I
C = 5 mA
Collector output
capacitance
Cob
—
1.6
—
1.6
—
1.6
—
pF
V
CB = 25 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD755, 2SD756 and 2SD756A are grouped by h
FE1 as follows.
DE
F
2SD755
250 to 500
400 to 800
600 to 1200
2SD756
250 to 500
400 to 800
—
2SD756A
250 to 500
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD756D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SD756E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SD757 | 制造商:HITACHI 功能描述: 制造商:HITCHI 功能描述: |
| 2SD758 | 制造商:Hitachi 功能描述:Bipolar Junction Transistor, NPN Type, TO-202 |
| 2SD760 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 |
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