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參數(shù)資料
| 型號： | 2SD755E |
| 英文描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 中文描述： | 晶體管|晶體管|叩| 100V的五（巴西）總裁| 50mA的一（c）|至92VAR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD755E |
2SD755, 2SD756, 2SD756A
3
0
50
100
150
Ambient Temperature Ta (
°
C)
C
Maximum Collector Dissipation Curve
750
500
250
Typical Output Characteristics
10
8
8
6
2
4
6
4
2
0
10
20
30
40
50
C
C
Collector to Emitter Voltage V
CE
(V)
I
B
= 0
10
μ
A
Typical Transfer Characteristics
C
C
Base to Emitter Voltage V
BE
(V)
0.01
0.03
0.1
0.3
1.0
3
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
CE
= 12 V
Ta = 100
°
C 75 50 25
–25
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.01
0.03
0.1
0.3
1.0
3
10
30
0
200
400
600
800
1,000
1,200
D
F
V
CE
= 12 V
Ta = 100
°
C
75
50
25
0
–25
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD755F | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD756AD | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 50MA I(C) | TO-226VAR |
| 2SD756D | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD756E | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SD757 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD755F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SD756 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD756A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD756AD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 50MA I(C) | TO-226VAR |
| 2SD756-AD | 制造商:Renesas Electronics Corporation 功能描述: |
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