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參數(shù)資料
| 型號(hào)： | 2SD699 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 40K |
| 代理商： | 2SD699 |
2SD669, 2SD669A
3
Electrical Characteristics
(Ta = 25°C)
2SD669
2SD669A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
—
180
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
—
160
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
—
—
10
—
—
10
μA
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 150 mA*
DC current transfer
ratio
1
60
—
320
60
—
200
2
h
FE2
V
CE(sat)
30
—
—
30
—
—
V
CE
= 5 V, I
C
= 500 mA*
I
C
= 500 mA,
I
B
= 50 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
= 10 V, I
E
= 0,
f = 1 MHz
2
Collector to emitter
saturation voltage
—
—
1
—
—
1
V
2
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Notes: 1. The 2SD669 and 2SD669A are grouped by h
FE1
as follows.
2. Pulse test.
—
—
1.5
—
—
1.5
V
2
—
140
—
—
140
—
MHz
2
Cob
—
14
—
—
14
—
pF
B
C
D
2SD669
60 to 120
100 to 200
160 to 320
2SD669A
60 to 120
100 to 200
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD699A | |
| 2SD700 | TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 200A I(C) | DISC-42 |
| 2SD718O | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SD718R | 5V Adjustable, 10W, CMOS, Step-Up, Switching Regulator Controller |
| 2SD733 | For AF Power Amplifier Use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD699A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 200A I(C) | DISC-42 |
| 2SD703A | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,40W) |
| 2SD705 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD707 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 8A 100W BEC |
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